Design of Multiband GaN HEMT Power Amplifier for Radar Applications

Gallium nitride (GaN) high-electron mobility transistors (HEMTs) exhibit remarkable capabilities catering to high power and wideband requirements. This study introduces the design of a wideband power amplifier based on GaN HEMT, operating with the frequency range of 0.5–2 GHz. From the experiment, it is found that with a gate voltage of −2.7 V and a drain voltage of 28 V, the GaN HEMT operates optimally. Notably, it achieves a power-added efficiency of nearly 50% with an RF output power of 14W. The many stages of power amplifier design are thoroughly explored in this paper, with an emphasis on the various electrical parameters. Upon the completion of layout preparations, electromagnetic (EM) co-simulation is also executed. Such comprehensive efforts result in the development of wideband power amplifiers that are particularly well-suited for applications in radar systems.