Schmitt Trigger Leakage Reduction Using MTCMOS Technique at 45-Nm Technology

With the advent of FinFET-based circuits, the scope of Moore’s law may be extended without the continuous scaling of CMOS devices. FinFET devices provide a viable method to create highly integrated, power-efficient Schmitt Trigger circuit for low-power digital applications due to its combination of enhanced flexibility and decreased short channel effects (SCEs). Schmitt Triggers are used in the design of Integrated Circuits (ICs) to produce digital signals from analogue signals in order to facilitate the implementation of short channel lengths and deliver exceptionally ultra-low power. The Schmitt Trigger Mechanism is being worked on, and the Schmitt Triggers are an important System on Chip (SoC) circuit. The simulations are carried out for various parameters such as leakage, parametric variation of power consumption, and dissipation using Cadence Virtuoso Tools at 45 nm technology. The MTCMOS technique is helpful in reducing the leakage parameters, and it is more appropriate than the conventional one. In the FinFET-based Schmitt Trigger, the leakage power is lowered up to a value of 27%, and the leakage current is reduced by 49% when compared to the conventional Schmitt Trigger.