Nanoscale Multi-gate Graded Channel DG-MOSFET for Reduced Short Channel Effects

Aggressive scaling of MOSFET results in degradation in their performance due to different short channel effects. The problem was addressed by use of high-k dielectric followed by different structural modifications. Among different modified devices, DG-MOSFET seems to be promising one due to scalability, simple structure and offering better control on channel. However, to obtain enhanced performance further structural modification of DG-MOSFET was introduced. This study aims at performance analysis of DG-MOSFET with graded channel and multi-gate. The results clearly indicate reduced DIBL effect for modified DG-MSFET structure.