Design and Comparison of Various Parameters of T-Shaped TFET of Variable Gate Lengths and Materials

T-Shaped Dual-Gate TFET channel provides larger tunneling junction area which offers more electrons, which enhances ION current. This paper will provide a description and see different variations by using substrate material like Silicon, Gallium Arsenide, Germanium at different channel lengths (46 nm, 36 nm, 26 nm, 16 nm, 10 nm). For insulating material, we have taken Hafnium oxides (HfO2) and Silicon-oxide. We have analyzed and compared crucial characteristics such as the ION/IOFF ratio, the subthreshold swing (SSavg), transconductance, BTBT, electric field (EF), and surface potential. Germanium material which shows better ION/IOFF ratio and better subthreshold swing, Sensitivity than Silicon and Gallium Arsenide. Electric field and Surface Potential of device getting improved as we decrease the channel width.