Electrical and Optical Properties Optimization for Efficiency Improvement of CZTSSe Solar Cell

Cu2ZnSnS4(CZTS) is a thin film compound structure, considered an excellent photovoltaic absorber material for Photovoltaic (PV) cell. The proposed structure of solar cell is front-contact/ZnO/CdS/CZTS/NiO/back-contact. One of the layers that significantly affects the conductivity of the carriers and improves the power conversion efficiency of PV cell is the hole transport layer (HTL). The goal of this examination is to determine the impact of NiO hole transport layer on the performance of proposed CZTS absorber material based solar cell. For this solar cell structure, the open—circuit voltage (Voc), short—circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) are calculated at various thickness of the absorber material, operating temperature, and series resistance of the device. At optimized thickness of 2 µm, efficiency is achieved 23.13% while Voc is 0.9813 V, Jsc is 27.8 mA/cm2, and FF is 84.59%. This work provides guidelines for the fabrication of thin film CZTS solar cell.