Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study
摘要
Recently, the features of AlGaN/GaN high electron mobility transistors (HEMTs) known as breakdown voltage (BV) have garnered a lot of interest for RF and Power applications. But due to the electric field and current collapse, the breakdown voltage of the GaN HEMTs device is reduced. Therefore, in this research, the field plate technique has been studied for enhancing the GaN HEMTs device breakdown voltage by using Silvaco TCAD software. It's observed that the dual field plate has shown a higher breakdown voltage around 1100 V, whereas the gate field plate and source field plate have illustrated a breakdown voltage of 820 and 1000 V approximately. Subsequently, GaN HEMTs presented a threshold voltage (VTH) of − 3.3 V and transconductance (GM) of 16.3 mS/mm approximately.