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A Study on Switching Frequency Effect of Silicon Carbide MOSFET to Motor Drive

  • David Lwo,
  • Zhan-Bo Fang,
  • Yu Tsai,
  • Min-Fu Hsieh

摘要

This paper explores the influence of switching frequency that can be accelerated by silicon carbide (SiC) transistors on the drive circuit performance of permanent magnet synchronous motor (PMSM). The importance of switching frequency for space vector pulse width modulation (SVPWM) and the reason of switching frequencies limited by switching speed of components will be briefly explained. In this paper, an intuitive method is proposed to judge whether the switching frequency of SVPWM is sufficient to work smoothly. A silicon based IGBT and SiC MOSFET voltage source inverter for space vector modulation-based direct torque control is established by using MATLAB/Simulink for PMSM. The torque ripple and performance of a motor drive system after being updated with silicon carbide transistors with an increased switching speed and frequency is analyzed and verified with simulation.