Stochastic Performance of CNTFET with High ‘k’ Dielectric Material Over Conventional Silicon Devices in Optimization of Drain Current

Due to their distinctive electrical characteristics, such as high electron mobility and low power dissipation, carbon nanotube field-effect transistors (CNTFETs) are developing as potential replacements for conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). Low drain current is one issue that CNTFETs currently struggle with, which restricts the range of applications they can be used for. Using high k dielectric materials as gate insulators, such as hafnium oxide, yttrium oxide, and lanthanum oxide, is one method of boosting the drain current in CNTFETs. These substances can lessen gate leakage current, which demonstrates an improvement in drain current. The ambient temperature of the CNTFET device can also be changed in order to optimize the drain current. In this study, different high k dielectric materials are investigated for their potential to optimize drain current in CNTFETs. Different temperatures were used to measure the drain current, and the outcomes were compared to those of conventional MOSFETs. It was discovered that whereas the drain current of MOSFETs stayed constant with temperature, the drain current of CNTFETs rose. The findings demonstrated that the drain current of CNTFETs is significantly affected by temperature and may be effectively increased by using high k materials for dielectrics. This study offers a fresh method for improving the drain current in CNTFETs and creates fresh possibilities for their useful applications. When compared to conventional MOSFETs, CNTFETs with high k dielectric material exhibit improved drain current. The temperature dependence of the drain current in CNTFETs provides an additional degree of freedom for optimization, making them a promising technology for future high-performance semiconductor devices.