Comparative Analysis of Various SRAM Bit Cells for 32 nm Technology Node

The growing demand for low power and faster processers had mandated designing cache memory that assists the same. Thus, this paper gives a comparison review of different 7T, 8T, and 9T SRAM bit cells reported in the literature based on their performance corresponding to different parameters. All the cells are designed for 32 nm technology node and simulated for 300 mV. The cells are analyzed for stability along with half select disturbance. The most common and popular way of estimating and comparing the cell stability is by computing the noise margin for all three modes, i.e., hold, read and write. Highest HSNM value is obtained for 8T-2 at 107 mV while, only 7T-2 and 9T-1 show good read stability owing to their high RSNM values. In terms of WM the 7T-1 cell has best value of 196 mV. Furthermore, the phenomenon of half select disturbance is explained thoroughly to identify best cell topology.