Development of Solid-Phase Epitaxy Techniques

This Chapter presents the first report on the epitaxial thin film growth of \({\textit{R}_{2}\text {O}_{2}\text {Bi}}\) using two newly developed solid-phase epitaxy techniques. The growth of epitaxial thin films of \({\textit{R}_{2}\text {O}_{2}\text {Bi}}\) poses a significant challenge due to the high vapor pressure and highly reductive state of \({\text {Bi}^{2{-}}}\) . To address these challenges, I have devised methods involving the direct reaction of metal powders and thin films under reductive conditions, as well as the reaction of metal multilayers through post-annealing. Upon the evaluation of the properties of the resulting thin films, it has become apparent that they exhibit a strong spin-orbit coupling within a two-dimensional electronic state.