All-p-Type Digital Circuits Using Single Gate and Double Gate Organic Field Effect Transistors

This paper presents comparative analysis of electrical behavior of double gate and single gate organic field effect transistors (OFETs). Charge carrier modulation makes double gate (DG) organic transistor a better choice for electronic equipments due to the presence of two conducting channels. A significant enhancement of 46%, 67%, and 40% is obtained in transconductance, ON current, and mobility, respectively. Further, this paper compares two configurations of all-p-type organic inverter circuits, i.e., zero Vgs load logic (ZVLL) and diode load logic (DLL). Their electrical responses are compared to analyze the effect of both the devices. Zero Vgs load logic configuration produces a maximum voltage gain (Av) of value 16 using DG-OFET while SG-OFET configuration yields a maximum Av of 6.27. Substantial improvement in propagation delay of 66% in DLL logic and 53% in ZVLL logic using DG as compared to SG-OFET are achieved. Furthermore, 2-input NOR gates are also implemented using same inverter circuits and their characteristics are compared. In NOR gate design, DG ZVLL configuration outperforms other configurations.