A Descriptive Analysis of Different Dual-Port and Single-Port 11T SRAM Cells for Low-Voltage Operations

Here, this paper is providing a descriptive comparison of three different SRAM cells in terms of mode of accessing, stability, power consumption, and accessing delay. Three different 11T cells are compared in this paper; two are dual-ended, while one is a single-ended memory cell. After all the analyses, it is found that amongst the three cells, the single-ended cell is found to be better in performance in every aspect. All the three cells are evaluated on an operating voltage of 0.4 V with the technology node 32 nm. The obtained values of SNM for hold of the three cells are 0.241 V, 0.26 V, and 0.19 V for 11T1 SRAM cell, 11T2 SRAM cell, and 11T3 SRAM cell and for read operation are 0.239 V, 0.256 V, and 0.187 V, respectively. The power consumed by these cells is 327.9 nW for 11T1 SRAM cell, 104.45 nW for 11T2 SRAM cell, and 82.36 nW for 11T3 SRAM cell. And, the accessing time for read/write of all three SRAM cells is minimum for 11T3 SRAM cell which is 332 ps and 192 ps, respectively.