Studies on Electrical Properties of Thin Film-Based Layered FeFET Devices

Thin film-based layered ferroelectric field effect transistor (FeFET) has been investigated using an Ag (metal) / BaTiO3 (Ferroelectric) / SrTiO3 (Insulator) / ZnO (Semiconductor) materials on SrTiO3 (100) single crystalline substrate. The layered FeFET structure was fabricated using Pulsed Laser Deposition techniques. X-ray diffraction measurements show the single phasic nature of all layers having substrate-oriented growth. Microstructure of measurements carried out using Atomic Force Microscopy on BaTiO3 and ZnO surfaces showing the homogenous granular structure. To understand the charge transport mechanism, current- voltage, resistive switching, and channel resistance have been carried out which shows the non-linear current–voltage characteristics having considerable resistive switching in reverse bias.