Characterization of Nanocrystalline ZnS Thin Film on p–Si by Chemical Bath Deposition Method

The nanocrystalline thin film of zinc sulfide (ZnS) was fabricated using the potentially effective chemical bath deposition method on silicon p-type substrates. Zinc chloride (ZnCl2) and thiourea (CH4N2S) were used as the starting materials for the synthesis of the film. The phase of the as-fabricated thin film was analyzed using an X-ray diffractometer. The pattern of diffraction reveals the formation of mixed cubic zincblende and wurtzite hexagonal phases in the fabricated nanoscale crystalline ZnS film. The optoelectronic properties of the film were recorded via ultraviolet–visible spectroscopy and current–voltage measurements. The ultraviolet–visible and current–voltage characteristics confirm that as-fabricated ZnS thin film exhibits a significantly improved performance in ultraviolet photoconductor devices.