Noise Behavior and Reliability Analysis of Epitaxial Layer Encapsulated TFET for Different Source Materials

In this study, the noise analysis of epitaxial layer encapsulated tunnel FET (ETLTFET) is carried out in the presence of interface trap charges, considering the device is subjected to various modifications in the source material (such as Si, SiGe, and Ge) and temperature. When compared to source materials comprised exclusively of Si or Ge, it has been found that device employing SiGe source material is less susceptible to noise. The statement above is supported by the observation of normalized Sid versus drain current, which evidently shows the enhanced electrostatic coupling and lower impact of noise in the SiGe source-based ETLTFET. The value of the drain current noise power spectral density (Sid) at an operating frequency of 100 Hz has been determined to be 8.07 × 10−26 A2/Hz for the device using a SiGe source. Finally, the temperature analysis on the noise performance demonstrates that the influence of temperature on Sid is apparent at low gate bias due to the existence of prominent trap-assisted tunnelling (TAT) and Shockley-Read-Hall (SRH) mechanisms. The findings also revealed that at lower frequencies, flicker and G-R noises predominate, whereas, at higher frequencies, diffusion noise is the major noise source.