Analytical Modeling of Performance Improved Negative Capacitance Heterojunction TFETs

The drain current enhancement and subthreshold swing reduction capabilities of negative capacitance in a double gate heterojunction tunnel field-effect transistor (DG HJ TFET) are analyzed in this chapter. The performance improvement features of negative capacitance tunnel field-effect transistor (NC TFET) are studied by comparing it with conventional double gate heterojunction tunnel FET. The drain current characteristics are modeled using tangent line approximation method to improve the precision. The model is validated by combining one-dimensional Landau-Khalatnikov equation and two-dimensional technology computer-aided design (TCAD) simulation. The model shows good matching with the device simulation data.