Negative Capacitance Tunnel Field-Effect Transistor: Impact and Future Scope

It is remarked that the increasing power dissipation issue can be addressed by the evolution of low power devices. The solutions that have been found in terms of negative capacitance (NC) field-effect transistors (NCFET) having subthreshold swing lower than 60mV/dec. The device have a layer of ferroelectric (FE) material in the gate stack. This thin layer of FE material internally amplifies the gate voltage. Which allows it to operate the device at a lower voltage. In addition, the FE materials provide an effective negative capacitance in a certain range of operating voltage, which will be demonstrated by Landau’s theory. This NC region of ferroelectric materials can further be utilized to reduce the subthreshold swing of transistors. Due to the lower subthreshold slope and compatibility feature with conventional CMOS devices, NCFET and other type of FE based MOS devices are expected to be a potential candidate for supersmart switches in low-power applications. Combination the NC effect in Tunnel FET we have NC-tunnel FET (NC-TFET) device has opened up the possibility of an ultralow-power and high-performance device.