Advanced Tunnel Field-Effect Transistors with Multi-gate and Pocket-Doping Technology

Complementary metal-oxide semiconductor (CMOS) technology has proven to have significant performance in the nano era and more of small geometry devices come into the market using the concept of scaling based on Moore’s law. Research is focused on investigating more and more of innovative multi-gate devices. Intensive research in the semiconductor industry gave birth to a green transistor, namely tunnel field-effect transistors (TFETs). TFETs astonishingly outbeat the demon of short-channel effects (SCEs) to a considerable level due to their distinct switching mechanism “BTBT tunneling” across the tunnel barrier. The ability of TFETs to achieve a subthreshold swing (SS) of less than 60 mV/dec at room temperature and low leakage current in the region of femtoamperes has kindled researchers’ interest in recent past. This makes it possible to reduce system power. This is undoubtedly a boon in the scenario of power demand and scarcity. Hence, TFET is acknowledged as a best alternative for energy-efficient device technology. In this chapter, we are emphasizing on the low-power transistor TFET and its outstanding performance in the suppression of SCEs through its advanced device structures achieved through work function engineering and channel engineering.