Understanding the Effects of Temperature on Double Gate Doping-Less TFET’s Analog/RF and Linearity Performance

Because of its resistance to random dopant fluctuations (RDFs) and lack of need for high thermal budgets and costly annealing techniques, the doping-less tunnel field-effect transistor (DL-TFET) is regarded as a developing TFET structure. Yet, temperature sensitivity is a key factor to consider when predicting a device’s dependability since, when employed in a system, the bandgap of semiconductor material (Eg) varies as a result of temperature fluctuations. Thus, the effect of temperature changes (240–360 K) is examined in this work with regard to the linearity and RF/analog characteristics of a HJ (heterojunction), double gate (DG), doping-less (DL) TFET, throughout. Analysis of RF/analog and DC parameters like: ID − VG characteristics, ID − VD characteristics, gm – transconductance, gd – output conductance, fT – cutoff frequency, TGF – transconductance generation factor, and TFP – transconductance frequency product has been carried out using ATLAS simulation tool while taking the effect of temperature fluctuations. Also, temperature changes are taken into consideration while evaluating linearity characteristics such as the “second-order voltage intercept point (VIP2),” “third-order voltage intercept point (VIP3),” the “intermodulation distortion (IMD3),” and the “third-order input-interception point (IIP3).”