Passivation in the c-Si Solar Cell to Enhance the Efficiency with Low Surface Recombination Velocity

The simple structure of silicon cell with the passivated structure has great promise to generate the high efficiency single junction silicon solar cell, without adding the complexity of the single junction structure. The prime focus here is to improve the open circuit voltage of the cell, which has the bandgap energy of 1.12 eV. The passivation phenomenon provides the flow of only one type of carrier, which ultimately improves the open circuit voltage of the cell. The silicon cell is also analyzed with the low surface recombination velocity 1 × 104 cm/s in the top and bottom contact region and shows good results. The electric field in the p-n junction of the base and passivated region is found higher than the p-n junction of the window and base region. Also, the tunneling phenomenon is observed in the passivation region. The designed passivated structure provides current density of Jsc = 39.20 mA/cm2 and open circuit voltage of Voc = 711.77 mV with high fill factor of FF = 82.46%. Under 1-Sun environment with the standard AM1.5G spectrum, the solar cell is modeled with 21.98% efficiency.