Limitation of CMOS Scaling and Effects of Parasitic Elements on the RF Performance

The invention of the transistor marked a pivotal moment in microelectronics, enabling the development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs, have undergone significant size reduction, facilitating the integration of billions of them into a single integrated circuit (IC). This miniaturization has fueled the evolution of portable gadgets, such as smartphones, into powerful handheld computers. However, aggressive scaling of transistor size presents challenges such as increased leakage current and the dominance of parasitic elements, necessitating innovative structural modifications. Despite these challenges, advancements like Double Gate MOSFETs and FinFET structures have improved device performance. This chapter explores the transformative impact of transistor scaling on electronics technology, addressing both its benefits and challenges.