Quantum Effects in Multi-gate MOSFETs

In the modern days, VLSI technology meets the requirement of integrated circuits with enhanced speed, better packing density, and lowest power consumption with energy efficiency. To downscale the device geometry and increase packing density, it is essential to apprehend the device approaches in many ways, resulting in shortcoming of several short-channel effects in classical MOS devices. As silicon films becoming significantly narrower due to the downscaling of multi-gate MOSFETs, additional factors like quantum confinement must be taken into account. The fact that this effect manifests in numerous dimensions makes characterization and modeling of quantum effects crucial. When appropriately interpreting their electrical and transport properties, quantization effects are critical. The book chapter focused on quantum effects on double gate MOSFET in both modeling and simulation. The coupled Schrodinger-Poisson equation is evaluated using the variational method to evaluate the impact of quantum effects. The penetration of the average inversion layer, sometimes referred to as the inversion charge centroid, is the most difficult parameter to model and the most important factor in determining the importance of quantum effects on the inversion charge of MOS devices. The inversion charge centroid is often calculated using the quantum charge distribution function. To acquire the electrical potential distribution and the energy levels followed by all the electrical properties of the devices divergent to device materials, the aforementioned equations must be consistently solved.