Design and Modeling of Gate Engineered Tunnel Field-Effect Transistor

With complementary metal-oxide semiconductors (CMOS) as the dominant invention, microelectronic production has witnessed a dramatic improvement in the ability to assemble components on a silicon chip. The Tunnel Field Effect Transistor (TFET) is a fundamental component of modern system-on-chips (SOCs), which include billions of devices. In order to build a successful integrated framework, it is necessary to have a precise and trustworthy scientific representation of the TFET transistor, which is essential for widespread PC replication. In this way, a compact model for the device is created by representing TFET attributes with a lot of analytical circumstances