Thin Film Analysis After Oxidation
摘要
In this chapter, the methodologies to measure the characteristics of silicon dioxide (SiO2) layer will be discussed. Especially, by comparing several oxidation-formation methods, this chapter will help the readers understand the different characteristics of the SiO2 layer. According to how the SiO2 layer is made (anodization, sputtering, TEOS CVD, CO2 CVD, and thermal oxidation), its characteristics and density will vary a lot. In essence, this chapter aims to design a high-quality SiO2 layer so that the produced transistor could have high-quality SiO2.