Analysis of Different Innovative Gate Field Plate Structures of AlGaN/GaN HEMT
摘要
AlGaN/GaN HEMT with different innovative structures of gate field plates has been designed to study and compare the analog and breakdown characteristics. Addition of field plates improves the breakdown voltage but increases the capacitance which degrades the frequency performance of the device. AlGaN/GaN HEMT with different gate field plates structures has been studied by using TCAD simulator. Highest breakdown voltage of 760 V is acquired for T-gate field plate structure.