Design and Performance Analysis of InSb/InGaAs/InAlAs High Electron Mobility Transistor for High-Frequency Applications

This paper investigates the performance of a high electron mobility transistor (HEMT) with a 0.4 µm gate size enhancement mode. The device is composed of an InGaAs/InAlAs structure grown on an InSb substrate, with heavily doped In0:6Ga0:4As source/drain (S/D) regions and dual δ(sigma)-doping linear layers. The transistor described in this paper incorporates a buried Au metal gate technique to minimize short channel effects and enhance transconductance. The device also features heavily doped In0:6Ga0:4As source/drain (S/D) regions, Si dual sigma-doping linear layers at the edges of the In0:75Ga0:25As channel area. The high electron mobility transistor (HEMT) InSb/InGaAs/InAlAs provides outstanding high-frequency performance. Silvaco TCAD simulations that use the accurate methodology at room temperature indicated that the investigated device exhibited good pinch-off performances of IDS = 222.8 A at VGS = − 0.6 V, with a high transconductance of 894.8 A/V and a threshold voltage (IDS) of 3 V.