Fabrication and Characterization of rGO-Doped TiO2 Nanocomposite for Temperature Variable I–V Measurements

The measurements of the electronic characteristics of a device at elevated temperatures are found to be very useful in various applications. Therefore, researchers have made a handful of efforts to evaluate the electronic characteristics of a device at elevated temperatures which may be achieved by careful optimization of the governing factors. One of the prominent governing factors may be the type as well as the dimensionality of the sensing materials. This work reports the evaluation of the temperature variable electronic characteristics of the fabrication of the device via prepared reduced graphene oxide (rGO) doped titanium-di-oxide (TiO2) nanocomposite. This electronic device is found to be accurate, simple, cost-effective, and capable of operating temperature in the range (30–120) °C. The improved performance of the fabricated device is found to be due to the extraordinary structural, morphological, thermal, and electronic properties of rGO-doped TiO2 nanostructures. To measure the output characteristics of the device operating at elevated temperatures, i.e., at 90 °C or above may be a crucial issue because it may overheat the device and there would be a risk of burning the device. Therefore there would be a sleek safe window of operating temperatures of the fabricated electronic device. Finally, the temperature variable electronic phenomenon was discussed well via suitable band diagrams where it may be concluded that the type of nanostructures its dimensionality and the operating temperature, significantly affect the overall performance of the device.