Physical Properties of Pure MoS2 Thin Films Grown on a Large Area Using a CVD Process in a Single-Zone Furnace

We report the large-area growth of pure-phase, high-quality MoS2 thin films by the Chemical Vapor Deposition (CVD) process in a single-zone furnace. All the parameters, like temperature, gas flow rate, precursor quantity, substrate type, and the distance between precursor and substrate, have been optimized. The XRD confirms the formation of pure 2-H phase MoS2, and Raman spectroscopy suggests the deposition of a relatively thick film. FESEM images clearly show the formation of the vertical nano-wall structure. The analysis of core level spectra of Mo 3d and S 2p shows that Mo is predominantly in the 4+ valence state and indicates the formation of a pure MoS2 phase. The film shows diamagnetic behavior and very low reflectance (≤ 15%) at room temperature.