Influence of Gamma Irradiation on Structural and Optical Parameters of Se85Te9Ag6 Nanochalcogenide Thin Films

In this research work, we have done a systematic study of the influence of γ-irradiations on the parameters related to the optical characteristics of Se85Te9Ag6 nanochalcogenide thin films. The conventional melt quenching technique has been adopted for the synthesis of the bulk Se85Te9Ag6 alloy. The non-isothermal DSC measurements of Se85Te9Ag6 chalcogenide glasses were done for the confirmation of their glassy and amorphous nature. Thin films (40 nm) were deposited by the physical vapor condensation method on glass and Si substrates. γ-radiation of doses 5, 10, and 15 kGy was exposed on nano-thin films at a rate of 2 kGy hr−1. The JASCO UV/VIS/NIR spectrophotometer was used for optical studies of Se85Te9Ag6 nano-thin films. The optical measurement data confirms the indirect transition rule in the Se85Te9Ag6 glass. The observed value of the extinction coefficient and absorption coefficient has shown an increment with the dose of gamma radiation, whereas the increment in the crystal defects may lead to a decrement in the value of the estimated optical band gap.