Performance Estimation of Multilayer-Stack-Channel IGZO-Based Thin-Film Transistor in Double-Gate Mode

Several additional amorphous oxide materials have been employed as promising materials in Thin-Film Transistor (TFT) applications due to their good transparency, resilience, and cost-effectiveness. However, due to low attainable mobility and low turn-on currents, the single-layer channel a-IGZO TFT is insufficient. To improve the switching characteristics of IGZO TFTs, this research suggests a multi-stack channel configuration. In this study, the source of performance enhancement in double-gate TFTs, compared to the Single-Gate (SG) multi-layer stack channel structure, has been described. Low mobility and Subthreshold Swing (SS) degradations occur in SG multi-layer stack channel TFTs. The field-effect mobility (FE) of SG TFTs (14.70 cm2/V-s) increases to 24.92 cm2/V-s when the gate voltage (VG = 10 V) is increased. From the channel’s top to the gate-insulator interface (1.3 × 1018 per cubic cm), the concentration of electrons in SG TFT declines gradually (1.86 × 1018 per cubic cm). The current density in the DG structure of the multi-stack channel drops from 7.5 A per cm2 to 2.5 A per cm2, leading to accumulation in the a-IGZO bulk and a large drain current. When the results from the proposed structure were compared to current results, they were found to be extremely encouraging and promising for future displays.