Enhancement of Breakdown Voltage Using Trench Edge Termination Technique in SiC-Based Power Device

The development of technologies with high voltage and high frequency somewhat affects how comfortable modern society is. Wide bandgap semiconductors have taken the place of silicon-based devices because of their mature performance. However, edge effects are to blame for the premature collapse of wide bandgap semiconductor devices. The current work illustrates breakdown voltage increase in a Schottky diode based on SiC by adopting trench edge termination. In the structure’s trench, SiO2 was placed. The device structure has been replicated using the atlas module of the Silvaco TCAD program. There have been many models used for ionization, recombination, impact ionization, and mobility. It has been observed that the breakdown voltage rises to 100 V as a result of the electric field becoming stronger near the device’s edges. Using the trench termination, the edge electric field crowding has been found spreading away from the edges of the device and in the SiO2 layer. As a consequence, the trench edge-terminated device possesses a reverse breakdown voltage, which was increased to 500 V.