Comparative Analysis of Gate Driver Circuits for GaN MOSFET-Based Class E Resonant Inverter

There are evolutionary changes that may be seen in power electronics applications and industries, which brought the necessities of higher power density and higher frequency semiconducting devices. These requirements can be achieved with the help of new generation wide band gap semiconducting devices such as silicon carbide (SiC) and gallium nitride (GaN). The power switching devices based on GaN material have greater performance in comparison with silicon (Si) and SiC material-based semiconducting devices. In this work, the fundamental driving requirements of the GaN MOSFET are discussed in detail. A totem pole resonant gate and transient resonant gate drivers are considered for driving the GaN MOSFET. The simulation studies for both types of driver circuits are analyzed by using LTspice simulation. The various losses such as gate driving loss, conduction loss, and switching losses are also compared for the performance of different gate driver circuits of GaN MOSFET-based class E resosnant inverter. Finally, the performance of the class E resonant inverter is validated using LTspice simulation software.