Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications

In this chapter, the evolution of high-speed devices for high performance and power used in several applications has been introduced. To design, characterize and fabricate the such type of devices, the elemental semiconducting materials used in the modelling of conventional devices like MOSFETs and MESFETs have been replaced by compound semiconducting materials (Group III–V) like AlGaAs, AlGaN, InP AlInAs are used to form heterojunctions. These heterojunctions are formed by two dissimilar semiconducting materials, one with a narrow bandgap and the other is a wide bandgap. The performance of these devices are compared. The most important parameter to be considered to form heterostructures is the lattice constant; heterojunctions are formed with materials that have good lattice matches to progress the performance of the devices. The various applications of these high-speed devices are also presented in this chapter, also the similarities between the buried channel MOSFET and the HEMT have been compared, few parameters like ON resistance, and temperature-dependent characteristics of both MOSFET and HEMT were analysed.