Impact of Dual Gate Material on Performance in Armchair Graphene Nanoribbon Vertical TFET of 1.35 nm Widths

This paper highlights the advantage of employing dual gate material in Armchair Graphene Nanoribbon (AGNR) DG Vertical Tunnel FET (DG-VTFET) to enhance the performance parameter, namely OFF simultaneously and ON-current (IOFF and ION), ION/IOFF current ratio, threshold voltage (VT), and as well optimize average subthreshold slope (SSAvg). The reported work illustrates that the appropriate selection of work function (Φ) for the tunnel and auxiliary gates at the device’s source and drain sides significantly increased the potential. In addition, to improve the device’s overall performance, high dielectric material is utilized in the oxide. The fluctuation of work function in the range of 4.0–4.8 eV has an impact on the carrier transportation due to the variation in tunneling width, considerable variation in OFF-state current, ION-to-IOFF ratio, threshold voltage (VT), as well as SS are perceived due to the work function dependence. Moreover, the performance comparisons of conventional single gate material (SMG) and proposed dual gate material (DGM) of AGNR-DG-VTFET have been carried out in this work.