Single Quarter-Wave Phase-Shifted Bragg Grating Modulator on SOI with Enhanced Modulation Technique
摘要
In this work, the effect of temperature on a single quarter-wave phase-shifted Bragg grating modulator is investigated in detail. The improved modulation performance in terms of tunability of the proposed modulator due to temperature is presented here successfully. It is shown that 1 nm wavelength can be shifted by applying −3.0 V reverse bias voltage with 10° temperature enhancement using the modulator. So, high-speed modulation up to 100 GHz can be achieved.