Investigation on Performance for Silicon and GaAs Channel of Double-Gate MOSFETs

In this work, a conventional DG-MOSFET is implemented and its mechanism is investigated by Silvaco TCAD Atlas. The prime objective of this manuscript is to understand the working operation and design and its related performance based on higher temperature stability. To investigate the degree of short-channel effects, the natural length must be specified due to different essential parameters like threshold voltage, Off current, and subthreshold slope rely on it. As the results obtained for GaAs is superior to that of silicon and the findings in this manuscript can give new insight into DG-MOSFETs in terms of electrical parameters which in turn results in better real time applications and advancements in technology. In this manuscript, we have investigated analog performance in terms of drain current obtained for GaAs which is thrice to that of silicon and the effect of temperature of Double-gate MOSFETs. From the results section it can be concluded that as there is enhancement in electrical parameters obtained which are acting as an essential parameters for sensitivity that can be made applicable for various biosensing applications.