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Advanced IC Manufacturing Processes

  • Hanming Wu,
  • Jesse Jen-Chung Lou,
  • Hong Xiao,
  • Yimao Cai,
  • Yuancheng Yang

摘要

MOSFETs continue scaling following the Moore’s law in order to improve device performance at reduced power and cost. The scaling has driven the integrated circuit (IC) industry toward a number of major technological innovations especially in advanced IC manufacturing processes. This chapter introduces some key IC processes including the low K dielectric and air gap for the interconnect technology, plasma doping process for conformal doping, and ultra-shallow doping. The new lithography technologies of nanoimprint lithography and directed self-assembly lithography for nanoelectronic device fabrication are briefly introduced. The characteristics and their application of the advanced processes are addressed.