Non-traditional New Structure Devices

With the rapid development of the integrated circuit (IC) process technology, IC device technology has made great advances. A variety of new structural and new principle devices are proposed to meet the needs of device technology and application development. This chapter focuses on the introduction to non-traditional new structures and new principles of logic and storage devices for the ultra-low power consumption application, such as gate-all-around (GAA) device, tunneling field-effect transistor (TFET), negative capacitive FET, magnetoresistive random-access memory (MRAM), phase-change random-access memory (PCRAM), resistive random-access memory (RRAM), etc. The structure and working principle of the devices are described. It is expected the new devices play an important role in the field of ultra-low power consumption application in the future.