Compound Semiconductors

Compound semiconductor materials can meet various requirements as advanced materials for the information era, which can be roughly divided into second- and third-generation semiconductor materials. The second-generation semiconductor materials mainly include GaAs, InAs, InP, etc., and are often used to fabricate high-speed, high frequency electronic devices, and optical electronic devices. The third generation of semiconductor materials is represented by silicon carbide (SiC), gallium nitride (GaN), etc., which have large band gap, and are generally used for power electronic devices, high frequency devices, LEDs, and semiconductor lasers. This chapter focuses on the growth methods, physical and optoelectronic properties of various compound semiconductor materials, and their substrate materials.