Plasma Etch Equipment

This chapter begins with a brief overview of the plasma etching principle, equipment categorization, and their applications. A total of 11 typical plasma etch techniques and equipment are introduced, including ion beam etching (IBE), plasma etching (PE), reactive ion etching (RIE), magnetically enhanced RIE (MERIE), capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron cyclotron resonance (ECR), remote plasma source (RPS), helicon wave plasma (HWP), surface wave plasma (SWP), and atomic layer etching (ALE). In addition, three major components common to all kinds of plasma etch tool, cluster platform, reactor material, and electrostatic chuck (ESC) are described. Dry clean equipment is also included in this chapter.