The Influence of Doping the Active Layer P on the Electrical Parameter of the Solar Cell PIN Based on InGaN

In the search for materials to improve the performance of solar cells, the selection of material is very important for optoelectronics. The InGaN material with excellent absorption is one of the most coveted materials, however, we have studied the influence of doping on the performance of the solar cell, PIN based on InGaN, for a molar fraction \(x = 0.72\) of Indium. In this work, we studied an analytical simulation of the performance of the solar cell by varying the concentration of \(N_{a}\) doping, of the active layer P. The variation of the electrical parameters of the cell was simulated according to the variation of doping going from \(10^{12}\)  cm–3 to 1019 cm–3. The results obtained from this simulation are optimal with a conversion yield that exceeds 24%. These studies were performed under standard conditions (AM1.5, 1000  \({\text{mW}}\) / \({\text{cm}}^{2}\) , 300 K), and the simulation was performed in the Matlab computer code.