Using the transfer matrix method, the effect of introducing a block of defects in a coupled GaAs/GaAlAs MQWs structure has been investigated. This block of defects contains coupled geometrical and/or geo-material defects. We found that by switching the defect block (i.e. the layer D instead of C and \(D^\prime \) instead of \(C^\prime \) ), while taking the thicknesses corresponding for each layer (i.e. layer D with a thickness of \(d_D\) ), a well-defined electronic localized state appeared inside the gap band, with a maximum rate transmission and an energy value of 830.26 meV. However, by switching only the layers composing the defect block with the same thicknesses used for a block of defect (CDCD), we find the same number of states as the precedent structure with an energy values equal to 835.26 meV. Also by increasing the concentration of the two barriers composing the block of defects, for both previous cases, we found that the number of the localized electronic states increases for a concentration \(x_0\) higher than 0.3. After this concentration value, the number of states increases with a varied transmission rate for both cases, with a higher transmission rate noted for a concertation \(x_0=0.4\) . These states move towards higher energies as the concentration increase. That kind of structure could be useful to design electronic filters, due to their tunnability and adjustable characteristics.