Temperature rise is one of the key points that GIS disconnect switchgear focuses on. Due to its compact structure, the 110 kV GIS double-fracture disconnect switch requires strict attention to its temperature rise. To accurately analyze the temperature field distribution of DDS during operation, a three-dimensional finite element simulation model is first established. Then, the heat source is calculated through current, conductor resistance, and contact resistance, and the temperature field is simulated to obtain the temperature rise of each component of the DDS equipment. Finally, the accuracy of the simulation was verified through experiments. The results indicate that the temperature rise of each part of DDS during actual operation is within the range of design limit.