Most silicon carbide modules still use conventional silicon-based packages, limiting them to high-temperature, high-frequency applications, and require optimised packaging to take advantage of their characteristics. In this paper, a multi-surface heat dissipation three-dimensional package silicon carbide module is designed to further increase the heat dissipation surface. The stray inductance of the module is reduced to 4.99206 μH by ANSYS Q3D simulation and comparison of the stray parameters. This allows the switching frequency of the silicon carbide device to be increased. Thermal simulation tests were performed by ANSYS Workbench, and the simulation results show that the addition of the heat sink surface reduces the maximum temperature by 49.67 ℃, which verifies the improvement of the heat dissipation performance. Finally, thermal stress simulations were performed on the half-bridge section to verify the stress tolerance performance, and the three-sided structure was verified to have improved stress tolerance and thermal deformation compared to the two-sided structure, which further verified the improvement in the mechanical performance of the module.