This study focuses on the reliability assessment of Press-pack IGBTs, crucial components in power electronics for ensuring stable system operation. Addressing the limitations of existing research, which often neglects the electrothermal coupling effects, we establish a comprehensive model that considers these effects. Through high-precision numerical calculations, we obtain key parameters such as electric field distribution, temperature distribution, and mechanical stress distribution. Experimental validation confirms the model’s accuracy in predicting Press-pack IGBTs’ performance changes and reliability under various operating conditions. This research not only enhances reliability assessment methodologies but also supports optimal design and practical applications of Press-pack IGBTs.

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Temperature Distribution and Mechanical Stress Analysis of Press-Pack IGBT Single Chip Under Different Operations

  • Kai Xiao,
  • Zhen Wang,
  • Xilin Yan,
  • Wenxiao Li,
  • Yechun Liu,
  • Ping Liu

摘要

This study focuses on the reliability assessment of Press-pack IGBTs, crucial components in power electronics for ensuring stable system operation. Addressing the limitations of existing research, which often neglects the electrothermal coupling effects, we establish a comprehensive model that considers these effects. Through high-precision numerical calculations, we obtain key parameters such as electric field distribution, temperature distribution, and mechanical stress distribution. Experimental validation confirms the model’s accuracy in predicting Press-pack IGBTs’ performance changes and reliability under various operating conditions. This research not only enhances reliability assessment methodologies but also supports optimal design and practical applications of Press-pack IGBTs.