With the continuous advancement of power supply technology, the performance limits of silicon-based power semiconductors have been reached, unable to meet the demands of power semiconductor device technology. Therefore, there is a need for power semiconductor devices with higher performance to serve as the foundation for further progress in power supply technology. SiC and GaN devices are increasingly being utilized to meet the requirements of high frequency and high power density technology. This paper focuses on the parameter design of a wide range quasi-resonant forward/flyback DC/DC converter based on SiC, including transformer design, primary power switching transistor, flyback diode and forward diode selection, secondary resonant network design, filter inductor design and drive circuit design. Finally, a prototype of the principle is designed and the key waveforms are tested. The prototype design based on the principle of SiC quasi-resonant forward/reverse DC/DC converter is realized.