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The progress in semiconductor technology has played a crucial role in enhancing human existence by introducing significant innovations. This has been achieved by moving away from traditional planar structures and the use of Silicon Dioxide (SiO2) as an oxide material. Instead, non-planar transistor structures like Fin Shaped Field Effect Transistor (FinFET) have been designed utilizing high-k (HK) dielectric constant oxide materials and metal gates (MG), leading to revolutionary advancements. Ashby’s approach to materials selection offers an organized and methodical technique for researchers to make informed choices based on performance objectives, material attributes, and environmental factors. The purpose of this article is to use Ashby’s technique in an effort to choose the prime oxide material from a range of HK materials. Gallium Arsenide (GaAs) is a versatile metal gate material with relative benefits for a range of applications. GaAs’s distinct properties, which include high electron mobility, a wide band gap, low resistivity, a high breakdown voltage, low noise performance, and compatibility with III–V compound semiconductors, make it an essential material for a wide range of applications in high-frequency electronics, optoelectronics, and power devices.

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Design of 7 nm FinFET with High-k Dielectric Oxide Materials (HK) and GaAs as Metal Gate (MG) Using Ashby’s Material Selection Approach

  • 会议论文

  • 发表日期：

    2025年

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  • Mohd Abdul Muqeet,
  • T. Ranga Babu

摘要

The progress in semiconductor technology has played a crucial role in enhancing human existence by introducing significant innovations. This has been achieved by moving away from traditional planar structures and the use of Silicon Dioxide (SiO2) as an oxide material. Instead, non-planar transistor structures like Fin Shaped Field Effect Transistor (FinFET) have been designed utilizing high-k (HK) dielectric constant oxide materials and metal gates (MG), leading to revolutionary advancements. Ashby’s approach to materials selection offers an organized and methodical technique for researchers to make informed choices based on performance objectives, material attributes, and environmental factors. The purpose of this article is to use Ashby’s technique in an effort to choose the prime oxide material from a range of HK materials. Gallium Arsenide (GaAs) is a versatile metal gate material with relative benefits for a range of applications. GaAs’s distinct properties, which include high electron mobility, a wide band gap, low resistivity, a high breakdown voltage, low noise performance, and compatibility with III–V compound semiconductors, make it an essential material for a wide range of applications in high-frequency electronics, optoelectronics, and power devices.