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In this paper, a split-gate junctionless transistor (SG-JLT) is modeled, and the simulation is carried out. The I–V characteristic of the SG-JLT was compared and analyzed with the symmetric double gate junctionless transistor (SDG JLT) under the same parameters using Cogenda Visual 3D TCAD. The result shows that SG-JLT has a high ON-state current. The device characteristics of SG-JLT, such as drain current variation with drain voltage under different oxide thicknesses and surface potential variations, were studied.

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An Analysis of Surface Potential and Drain Current of a Split-Gate Junctionless Transistor Using 3-D TCAD

  • 会议论文

  • 发表日期：

    2025年

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  • Sonali Keithellakpam,
  • Nipanka Bora

摘要

In this paper, a split-gate junctionless transistor (SG-JLT) is modeled, and the simulation is carried out. The I–V characteristic of the SG-JLT was compared and analyzed with the symmetric double gate junctionless transistor (SDG JLT) under the same parameters using Cogenda Visual 3D TCAD. The result shows that SG-JLT has a high ON-state current. The device characteristics of SG-JLT, such as drain current variation with drain voltage under different oxide thicknesses and surface potential variations, were studied.