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This paper reports Ge source-based heterogate TFET on SELBOX substrate. The proposed TFET structure has been simulated based on analysis of DC parameters like transfer characteristic, sub-threshold swing (SS), ION/IOFF ratio, and capacitance over a temperature range from 300 to 500 K for Ge source heterogate TFET. The value of subthreshold swing and ION/IOFF ratio was found to be 30 mV/dec and 1.08 × 1012 that has shown a significant improvement as compared to recent reports. The effect of temperature on DC parameter has also been studied to ensure reliability of the proposed device.

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Temperature Reliability Analysis of Ge Source-Based Heterogate Tunnel FET

  • 会议论文

  • 发表日期：

    2025年

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  • Sukanta Kumar Swain,
  • Abhishek Raj,
  • Rishu Kumar,
  • Shashi Kant Sharma

摘要

This paper reports Ge source-based heterogate TFET on SELBOX substrate. The proposed TFET structure has been simulated based on analysis of DC parameters like transfer characteristic, sub-threshold swing (SS), ION/IOFF ratio, and capacitance over a temperature range from 300 to 500 K for Ge source heterogate TFET. The value of subthreshold swing and ION/IOFF ratio was found to be 30 mV/dec and 1.08 × 1012 that has shown a significant improvement as compared to recent reports. The effect of temperature on DC parameter has also been studied to ensure reliability of the proposed device.