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Junctionless Tunnel Field Effect Transistor (JL-TFET) is widely studied as a replacement for standard Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure for low power applications. These JL-TFET structures are explored to provide a higher current ratio and Subthreshold Slope (SS) well below 60 mV/decade. This paper proposes a Ta2O5 oxide-based heterojunction JL-TFET together with GaAs layers sandwiching the drain region, to achieve the current ratio of the order of 109 and SS of 31.21 mV/decade. This paper further explores the effect of oxide thickness and the choice of dielectric material for gate oxide for the proposed design.

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Novel Sandwich-Stacked Heterojunction Junctionless TFET for Low Power Applications

  • 会议论文

  • 发表日期：

    2025年

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  • Neha Singh,
  • Shilpi Birla,
  • Shashi Kant Dargar,
  • Neeraj Kumar Shukla

摘要

Junctionless Tunnel Field Effect Transistor (JL-TFET) is widely studied as a replacement for standard Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure for low power applications. These JL-TFET structures are explored to provide a higher current ratio and Subthreshold Slope (SS) well below 60 mV/decade. This paper proposes a Ta2O5 oxide-based heterojunction JL-TFET together with GaAs layers sandwiching the drain region, to achieve the current ratio of the order of 109 and SS of 31.21 mV/decade. This paper further explores the effect of oxide thickness and the choice of dielectric material for gate oxide for the proposed design.